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| FAST DMOS FET Switches N-Channel Enhancement-Mode SST211 / SST213 / SST215 FEATURES DESCRIPTION CORPORATION * High Speed Switching. . . . . . . . . . . . . . . . . . . . td(ON) 1ns * Low Capacitance . . . . . . . . . . . . . . . . . . . . . 2.4pF typical * Low ON Resistance . . . . . . . . . . . . . . . . . . . . 50 typycal * High Gain * Surface Mount Package * Ultra High Speed Analog Switching * Sample and Hold * Multiplexers * High Gain Amplifiers Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogic's proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical over stress. ORDERING INFORMATION Part SST211 SST213 SST215 XSST211 XSST213 XSST215 Package SOT-143 Surface Mount SOT-143 Surface Mount SOT-143 Surface Mount Sorted Chips in Carriers Sorted Chips in Carriers Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC APPLICATIONS PIN CONFIGURATION SCHEMATIC DIAGRAM 3 DRAIN (2) BODY (4) GATE (3) 2 4 CD1-1 1 SOURCE (1) PRODUCT MARKING SST211 SST213 SST215 211 213 215 SST211 / SST213 / SST215 CORPORATION ABSOLUTE MAXIMUM RATINGS (Tc = +25oC unless otherwise noted) Parameter Breakdown Voltages VDS VSD VDB VSB VGS VGB VGD SST211 +30 +10 +30 +15 -15 +25 -0.3 +25 -30 +25 SST213 +10 +10 +15 +15 -15 +25 -0.3 +25 -15 +25 SST215 +20 +20 +25 +25 -25 +30 -0.3 +30 -25 +30 Unit V V V V V V V V V V ID Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA PT Power Dissipation (at or below Tc = +25oC) . . . . 360mW Linear Derating Factor3.6mW/ o Tj Operating Junction Temperature Range . . -55 to +125oC TS Storage Temperature Range . . . . . . . . . . . -55 to +150oC ELECTRICAL CHARACTERISTICS (Tc = +25oC unless otherwise noted) SYMBOL STATIC BVDS BVSD BVDB BVSB ID(OFF) IS(OFF) IGBS VGS(th) rds(on) DYNAMIC gfs C(gs + gd + gb) C(gd + db) C(gs + sb) C(dg) td(ON) tr t(OFF) Common-Source 1 Foward Transcond. Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Time 10 12 2.4 1.3 3.5 0.3 0.7 0.8 10 3.5 1.5 4.0 0.5 1.0 1.0 10 12 2.4 1.3 3.5 0.3 0.7 0.8 10 3.5 1.5 4.0 0.5 1.0 1.0 10 12 2.4 1.3 3.5 0.3 0.7 0.8 10 3.5 1.5 4.0 0.5 1.0 1.0 ns VDD = 5V, VG(ON) = 10V RL = 680, RG = 51 pF VDS = 10V VGS = VBS = -15V f = 1MHz mS VDS = 10V, ID = 20mA f = 1KHz, VSB = 0 Drain-Source Breakdown Voltage 30 10 35 25 10 10 15 15 0.2 0.6 10 10 10 0.5 1.0 50 30 2.0 70 45 0.1 50 30 0.2 0.6 10 0.2 10 0.6 10 10 2.0 70 45 0.1 1.0 50 30 2.0 70 45 10 A V ohms 10 nA 25 20 20 V 15 15 25 25 25 ID = 10A, VGS = VBS = 0 ID = 10nA, VGS = VBS = -5V IS = 10nA, VGD = VBD = -5V ID = 10nA, VGB = 0 Source OPEN IS = 10A, VGB = 0 Drain OPEN VDS = 10V VDS = 20V VSD = 10V VSD = 20V VGB = 25V VGB = 30V VGS = 5V VGS = 10V VGS = VBS = -5V VGD = VBD = -5V VDB = VSB = 0 CHARACTERISTICS SST211 SST213 SST215 MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT TEST CONDITIONS Source-Drain Breakdown Voltage 10 Drain-Body Breakdown Voltage Source-Body Breakdown Voltage Drain-Source OFF Current Source-Drain OFF Current Gate-Body Leakage Current Gate Threshold Voltage Drain-Source 1 ON Resistance VDS = VGS, ID = 1A, VSB = 0 ID = 1mA VSB = 0 NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle Typical Performance Characteristics: See SD211-215 Series |
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